5A, 500V N-CHANNEL POWER MOSFET

The UTC 5N50K-MT is an N-channel power MOSFET adoptingUTC’s advanced technology to provide customers with DMOS,planar stripe technology. This technology is designed to meet therequirements of the minimum on-state resistance and perfectswitching performance. It also can withstand high energy pulse in • RDS(ON) < 1.4Ω @VGS = 10 V\n• High switching speed;

N-CHANNEL POWER MOSFET

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5A, 500V N-CHANNEL POWER MOSFET

The UTC 5N50K-MTQ is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also can withstand high energy pul • RDS(ON) < 1.5Ω @ VGS=10V, ID=2.5A \n• 100% avalanche tested \n• High switching speed;

500V N-Channel MOSFET

500V N-Channel MOSFET

500V N-Channel MOSFET

Features • 4.5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V • Low gate charge ( typical 13 nC) • Low Crss ( typical 8.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

500V N-Channel MOSFET

500V N-Channel MOSFET

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

PowerMOS transistor Isolated version of PHP8N50E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow