丝印代码：5N25；N-Channel MOSFET

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3.8A, 250V LOGIC N-CHANNEL MOSFET

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3.8A, 200V LOGIC N-CHANNEL MOSFET

The UTC 5N25Z is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. It can also withstand high energy pulse in the avalanche and commutation modes. The UTC 5N25Z is suitable for high ef • RDS(ON)=0.94Ω @VGS=10V,ID=1.9A \n• Low gate charge ( Typ=4.8nC) \n• Low CRSS ( Typ=6.0pF) \n• High switching speed \n• ESD Capability;

3.8A, 250V LOGIC N-CHANNEL MOSFET

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3.8A, 250V LOGIC N-CHANNEL MOSFET

文件：232.03 Kbytes Page：6 Pages

3.8A, 250V LOGIC N-CHANNEL MOSFET

文件：232.03 Kbytes Page：6 Pages

3.8A, 250V LOGIC N-CHANNEL MOSFET

文件：232.03 Kbytes Page：6 Pages

3.8A, 250V N-CHANNEL MOSFET

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3.8A, 250V N-CHANNEL MOSFET

文件：208.92 Kbytes Page：6 Pages

3.8A, 250V N-CHANNEL MOSFET

文件：208.92 Kbytes Page：6 Pages

3.8A, 250V N-CHANNEL MOSFET

文件：208.92 Kbytes Page：6 Pages

3.8A, 250V N-CHANNEL MOSFET

文件：208.92 Kbytes Page：6 Pages

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies. FEATURES • VDSS= 250V, ID= 4.4A • Dra

TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM

TMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, pow

Power Field Effect Transistor

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