HIGH SPEED 32K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology and utilizes WSIs patented self-aligned split gate EPROM cell. The industry standard PROM pin configuration of the WS57

MILITARY HIGH SPEED 32K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology and utilizes WSIs patented self-aligned split gate EPROM cell. The industry standard PROM pin configuration of the WS57

HIGH SPEED 32K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology and utilizes WSIs patented self-aligned split gate EPROM cell. The industry standard PROM pin configuration of the WS57

HIGH SPEED 32K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology and utilizes WSIs patented self-aligned split gate EPROM cell. The industry standard PROM pin configuration of the WS57

HIGH SPEED 32K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology and utilizes WSIs patented self-aligned split gate EPROM cell. The industry standard PROM pin configuration of the WS57