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MILITARY HIGH SPEED 2K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25 of the power required by its

STMICROELECTRONICS

意法半导体

HIGH SPEED 2K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25 of the power required by its

STMICROELECTRONICS

意法半导体

HIGH SPEED 2K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25 of the power required by its

STMICROELECTRONICS

意法半导体

HIGH SPEED 2K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25 of the power required by its

STMICROELECTRONICS

意法半导体

HIGH SPEED 2K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25 of the power required by its

STMICROELECTRONICS

意法半导体

更新时间:2026-1-6 8:03:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
WSI
23+
DIP
8560
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390
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WSI
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CDIP
67500
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WSI
2450+
CDIP24
6540
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WINBOND/华邦
2025+
777
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FDIP24
835
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WSI
24+
CDIP24
13000
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WSI
24+
CDIP24
49300
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