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MILITARY HIGH SPEED 2K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25 of the power required by its

STMICROELECTRONICS

意法半导体

HIGH SPEED 2K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25 of the power required by its

STMICROELECTRONICS

意法半导体

HIGH SPEED 2K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25 of the power required by its

STMICROELECTRONICS

意法半导体

HIGH SPEED 2K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25 of the power required by its

STMICROELECTRONICS

意法半导体

MILITARY HIGH SPEED 2K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25 of the power required by its

STMICROELECTRONICS

意法半导体

更新时间:2025-12-29 22:30:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
WSI
24+
DIP
8000
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20+
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67500
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WSI
0102+
CDIP
140
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4
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WSI
23+24
N/A+
9680
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WSI
2518+
CDIP
1546
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CDIP
12245
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CDIP
963
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WSI
25+
DIP
4500
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