Conductive Hinged Box with Foam

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包装：散装 描述：SIGN, RT LANE CL AHD ,BLK/ORG,48 标签，标志，护栏，标识 标志，铭牌，招贴

包装：袋 描述：BOX COND WITH FOAM 4.2X3.2X0.52 静电控制，防静电，ESD，无尘室产品 静电控制器件容器，防静电仪器盒子

数字电流表

SW RKR DPDT

25A at 12V DC. Moisture-resistant plastic housings, bezels and actuators. Glossy finish actuators and bezels except where noted. Snap-in mounting to fit panels .060\\\" through .250\\\" (1.5mm to 6.4mm). Silver contacts, brass blade or screw terminals. White actuators except where otherwise indicate

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent ga

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent ga

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

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