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SiGe HBT MMIC LOW NOISE AMPLIFIER, 1.2 - 3.0 GHz

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HITTITE

SiGe HBT MMIC LOW NOISE AMPLIFIER, 1.2 - 3.0 GHz

AD

亚德诺

Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

ONSEMI

安森美半导体

Amplifier Transistors

MOTOROLA

摩托罗拉

Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

ONSEMI

安森美半导体

Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

ONSEMI

安森美半导体

UHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange package, with two ceramic caps. The mounting flange provid

PHILIPS

飞利浦

548L产品属性

  • 类型

    描述

  • 型号

    548L

  • 制造商

    HITTITE

  • 制造商全称

    Hittite Microwave Corporation

  • 功能描述

    SiGe HBT MMIC LOW NOISE AMPLIFIER, 1.2 - 3.0 GHz

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