封装/外壳：6-SMD，无引线 功能：启用/禁用 包装：散装 描述：XTAL OSCILLATOR 晶体，振荡器，谐振器 振荡器

封装/外壳：6-SMD，无引线 功能：启用/禁用 包装：带 描述：DIFFERENTIAL/SINGLE-ENDED; SINGL 晶体，振荡器，谐振器 振荡器

125 V Detachable Power Supply Cords

文件：88.9 Kbytes Page：2 Pages

125 V Detachable Power Supply Cords

文件：88.9 Kbytes Page：2 Pages

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available

丝印代码：20-；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-

丝印代码：21*；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-

丝印代码：22*；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-