丝印代码：544M；4-Line Ultra Low Capacitance TVS Diode Array

Features Ultra low leakage: nA level Operating voltage: 5V Low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lightning) 5A (8/20μs) RoHS Compliant

丝印代码：544M；4-Line Ultra Low Capacitance TVS Diode Array

Features Ultra low leakage: nA level Operating voltage: 5V Low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lightning) 5A (8/20μs) RoHS Compliant

丝印代码：544M01LF；CLOCK DIVIDER

Features • Packaged in 8-pin SOIC • Pb-free package • IDT’s lowest cost clock divider • Easy to use with other generators and buffers • Input crystal at 16.777216MHz • Output clock duty cycle of 45/55 • Output Enable • Advanced, low-power CMOS process • Operating voltage of 2.25 V to 3.6

丝印代码：544M01LF；CLOCK DIVIDER

Features • Packaged in 8-pin SOIC • Pb-free package • IDT’s lowest cost clock divider • Easy to use with other generators and buffers • Input crystal at 16.777216MHz • Output clock duty cycle of 45/55 • Output Enable • Advanced, low-power CMOS process • Operating voltage of 2.25 V to 3.6

丝印代码：544MI01L；CLOCK DIVIDER

Features • Packaged in 8-pin SOIC • Pb-free package • IDT’s lowest cost clock divider • Easy to use with other generators and buffers • Input crystal at 16.777216MHz • Output clock duty cycle of 45/55 • Output Enable • Advanced, low-power CMOS process • Operating voltage of 2.25 V to 3.6

丝印代码：544MI01L；CLOCK DIVIDER

Features • Packaged in 8-pin SOIC • Pb-free package • IDT’s lowest cost clock divider • Easy to use with other generators and buffers • Input crystal at 16.777216MHz • Output clock duty cycle of 45/55 • Output Enable • Advanced, low-power CMOS process • Operating voltage of 2.25 V to 3.6

Clock Divider

文件：148.13 Kbytes Page：7 Pages

Clock Divider

文件：148.13 Kbytes Page：7 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC CLK DIVIDER 16.777MHZ 8SOIC 集成电路（IC） 时钟发生器，PLL，频率合成器

Clock Divider

文件：148.13 Kbytes Page：7 Pages

Clock Divider

文件：148.13 Kbytes Page：7 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC CLK DIVIDER 16.777MHZ 8SOIC 集成电路（IC） 时钟发生器，PLL，频率合成器

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

UHF power MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange. A marking code showing gate-source voltage (VGS) information is provided for matched pair applications. FEATURES •

UHF push-pull power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the