丝印代码：52AP；P-Channel 30 V (D-S) MOSFET

Features ■ –1.3 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V –1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High performance trench technology for extremely low RDS(ON). ■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30 higher power handling capability.

丝印代码：52AP；P-Channel 30 V (D-S) MOSFET

General Description These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package. Features ■ –1.3 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V –1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High