Cable glands / General Accessories

- Pressure compensation elements - Polyamide or brass cable glands - EMC and EX cable glands - Handles - DIN rail holders - Wall fittings - Enclosure holders - Enclosure feet - Battery compartments - Fixing material

丝印代码：520102001R；Rad-Hard 300 V, 5 A NPN bipolar transistor

Features • 100 krad • Linear gain characteristics • Inductive load ruggedness Description The 2ST15300 is a power bipolar transistor able to operate under severe environment conditions and radiation exposure. It offers high reliability performance and immunity to the total ionizing dose (

丝印代码：520102001R；Rad-Hard 300 V, 5 A NPN bipolar transistor

Features • 100 krad • Linear gain characteristics • Inductive load ruggedness Description The 2ST15300 is a power bipolar transistor able to operate under severe environment conditions and radiation exposure. It offers high reliability performance and immunity to the total ionizing dose (

丝印代码：520102002R；Rad-Hard 300 V, 5 A NPN bipolar transistor

Features • 100 krad • Linear gain characteristics • Inductive load ruggedness Description The 2ST15300 is a power bipolar transistor able to operate under severe environment conditions and radiation exposure. It offers high reliability performance and immunity to the total ionizing dose (

丝印代码：520102002R；Rad-Hard 300 V, 5 A NPN bipolar transistor

Features • 100 krad • Linear gain characteristics • Inductive load ruggedness Description The 2ST15300 is a power bipolar transistor able to operate under severe environment conditions and radiation exposure. It offers high reliability performance and immunity to the total ionizing dose (

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