HALF-BRIDGE IGBT MTP

Warp Speed IGBT Features • Gen. 4 Warp Speed IGBT Technology • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMT Thermistor (NTC) • Aluminum Nitride DBC • Very Low Stray Inductance Design for High Speed O

封装/外壳：12-MTP 模块 包装：托盘 描述：IGBT MODULE 600V 114A 658W 12MTP 分立半导体产品 晶体管 - IGBT - 模块

HALF-BRIDGE IGBT MTP

Features • Gen. 4 Warp Speed IGBT Technology • HEXFRED™ Antiparallel Diodes with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMD Thermistor (NTC) • Al2O3DBC • Very Low Stray Inductance Design for High Speed Operation • UL E78996 approved

HALF-BRIDGE IGBT MTP

Warp Speed IGBT Features • Gen. 4 Warp Speed IGBT Technology • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMT Thermistor (NTC) • Aluminum Nitride DBC • Very Low Stray Inductance Design for High Speed O

HALF-BRIDGE IGBT MTP

Features • Gen. 4 Warp Speed IGBT Technology • HEXFRED™ Antiparallel Diodes with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMD Thermistor (NTC) • Al2O3DBC • Very Low Stray Inductance Design for High Speed Operation • UL E78996 approved

Half Bridge IGBT MTP (Warp Speed IGBT), 114 A

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LOW SIDE CHOPPER IGBT MTP

Ultrafast Speed IGBT Features • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMT Thermistor (NTC) • Aluminum Nitride DBC • Very Low Stray Inductance Design for High Speed Opera

Ultrafast Speed IGBT

Features • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED™ Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMD Thermistor (NTC) • Al2O3 DBC • Very Low Stray Inductance Design for High Speed Operation • UL approved ( file E78996 )

LOW SIDE CHOPPER IGBT MTP

Ultrafast Speed IGBT Features • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMT Thermistor (NTC) • Aluminum Nitride DBC • Very Low Stray Inductance Design for High Speed Opera

Ultrafast Speed IGBT

Features • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED™ Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMD Thermistor (NTC) • Al2O3 DBC • Very Low Stray Inductance Design for High Speed Operation • UL approved ( file E78996 )

Low Side Chopper IGBT MTP (Ultrafast Speed IGBT), 100 A

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