封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：DIODE SCHOTTKY 20V 250MW AXIAL 分立半导体产品 二极管 - 射频

Schottky Barrier Diodes for General Purpose Applications

Description The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D conv

Absolute Maximum Ratings

Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or

Pico Second Switching Speed

Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or

SCHOTTKY BARRIER DIODE

DESCRIPTION: The ASI 5082-2810 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode.