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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.82V, @Vge=15V, Ic=12A)

Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs. • Industry standard TO-252AA package • Co

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs. • Industry standard TO-252AA package. • Combiness very lo

IRF

更新时间:2025-11-1 17:30:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
08+
TO-252
1755
IR
23+
TO-252
1755
INFINEON
TO-252
50000
IR
23+
TO-252
76072
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
21+
TO-252
30000
百域芯优势 实单必成 可开13点增值税
IR
25+23+
TO-252
28821
绝对原装正品全新进口深圳现货
Infineon Technologies
22+
DPak
9000
原厂渠道,现货配单
IR
17+
TO-252
6200
100%原装正品现货
IR
25+
TO-252
860000
明嘉莱只做原装正品现货
IR
23+
TO-252
7000

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