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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.82V, @Vge=15V, Ic=12A)

Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs. • Industry standard TO-252AA package • Co

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs. • Industry standard TO-252AA package. • Combiness very lo

IRF

更新时间:2026-5-25 9:36:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon Technologies
22+
DPak
9000
原厂渠道,现货配单
IR
2021+
TO-252
9000
原装现货,随时欢迎询价
IR
08+
TO-252
1755
IR
25+
TO252
9000
普通
IR
23+24
TO-252
29840
主营MOS管,二极.三极管,肖特基二极管.功率三极管
IR
24+
TO-252
9000
只做原装,欢迎询价,量大价优
IR
25+
TO-252
90000
全新原装现货
IR
24+
TO-252
65300
一级代理/放心购买!
IR
21+
TO-252
30000
百域芯优势 实单必成 可开13点增值税
IR
23+
TO-252
7000

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