丝印代码：4P05A-AP；-55V P-Channel Enhancement Mode MOSFET

Features - VDS=-55V ID=-4.0A - RDS(ON)

丝印代码：4P05M-AP；-55V P-Channel Enhancement Mode MOSFET

Features - VDS = -55V ID =-4.2A - RDS(ON)

封装/外壳：HC-49/US 包装：卷带（TR） 描述：CRYSTAL 5.0000MHZ 20PF SMD 晶体，振荡器，谐振器 晶体

封装/外壳：HC-49/US 包装：卷带（TR） 描述：CRYSTAL 5.0000MHZ SERIES SMD 晶体，振荡器，谐振器 晶体

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：74.1 Kbytes Page：6 Pages

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：75.24 Kbytes Page：6 Pages

POWER FIELD EFFECT TRANSISTOR

POWER FIELD EFFECT TRANSISTOR

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -4A@ TC=25℃ ·Drain Source Voltage- : VDSS= -50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -4A@ TC=25℃ ·Drain Source Voltage- : VDSS= -50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,