isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -4A@ TC=25℃ ·Drain Source Voltage- : VDSS= -50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

POWER FIELD EFFECT TRANSISTOR

POWER FIELD EFFECT TRANSISTOR

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -4A@ TC=25℃ ·Drain Source Voltage- : VDSS= -50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

丝印代码：4P05A-AP；-55V P-Channel Enhancement Mode MOSFET

Features - VDS=-55V ID=-4.0A - RDS(ON)

丝印代码：4P05M-AP；-55V P-Channel Enhancement Mode MOSFET

Features - VDS = -55V ID =-4.2A - RDS(ON)