High Voltage Phototransistor Optocouplers

General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea

High Voltage Phototransistor Optocouplers

General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea

High Voltage Phototransistor Optocouplers

General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea

High Voltage Phototransistor Optocouplers

General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea

High Voltage Phototransistor Optocouplers

General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea

6-Pin DIP High Voltage Phototransistor Optocouplers

Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea

Optocoupler, Phototransistor Output, With Base Connection

DESCRIPTION Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. FEATURES • Isolation test voltage 5000 VRMS • Interfaces with common logic families • Input-output coupling capacitance

PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)

AC LINE / DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC / DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER. HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL. RELAY CONTACT MONITOR. The TOSHIBA 4N38 (Short) through 4N38A (Short) consists of a gallium arsenide infrared emitting

HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua

STANDARD THRU HOLE CASE 730A-04

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6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

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6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

Description The 4N2X, 4N3X, H11AX series contains an infrared emitting diode optically coupled to a phototransistor. It is packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4N2X series: 4N25, 4N26, 4N27, 4N28 • 4N3X series: 4N35, 4N36, 4N37, 4N38 •

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

Description The 4N2X, 4N3X, H11AX series contains an infrared emitting diode optically coupled to a phototransistor. It is packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4N2X series: 4N25, 4N26, 4N27, 4N28 • 4N3X series: 4N35, 4N36, 4N37, 4N38 •

6 PIN DIP PHOTOTRANSISTOR

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6 PIN DIP PHOTOTRANSISTOR

文件：878.22 Kbytes Page：13 Pages