4A, 300V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N30Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * RDS(ON)

4A, 300V N-CHANNEL POWER MOSFET

The UTC 4N30Z is an N-channel mode power MOSFET usingUTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. • RDS(ON)<2Ω @ VGS=10V, ID=4A \n• High switching speed \n• Typically 3.2nC low gate charge \n• 100% avalanche tested \n• Enhanced ESD capability;

4A, 300V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N30Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * RDS(ON)

4A, 300V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N30Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * RDS(ON)

4A, 300V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N30Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * RDS(ON)

4A, 300V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N30Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * RDS(ON)

TOSHBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR

AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER. RELAY CONTACT MONITOR. The TOSHIBA 4N29 (Short) through 4N33(Short) consists arsnide infrared emitting diode coupled with a silicon photo darlington in a dual in-line pac

STANDARD THRU HOLE CASE 730A-04

The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series is designed for use in applications requiring high collector output currents at lower input currents. • Higher

GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS

Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ VDE 0884 approval available as a test op

GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS

Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ VDE 0884 approval available as a test op

GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS

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