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4N30价格
参考价格：￥1.0260
型号：4N30 品牌：Everlight 备注：这里有4N30多少钱，2025年最近7天走势，今日出价，今日竞价，4N30批发/采购报价，4N30行情走势销售排行榜，4N30报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
4N30 | TOSHBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER. RELAY CONTACT MONITOR. The TOSHIBA 4N29 (Short) through 4N33(Short) consists arsnide infrared emitting diode coupled with a silicon photo darlington in a dual in-line pac | TOSHIBA 东芝 |   | |
4N30 | 4A, 300V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 4N30 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. ■ FEATURES * RDS(ON) | UTC 友顺 | | |
4N30 | STANDARD THRU HOLE CASE 730A-04 The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series is designed for use in applications requiring high collector output currents at lower input currents. • Higher | Motorola 摩托罗拉 | | |
4N30 | Photon Coupled Isolator FEATURES: • High DC current transfer ratio • High isolation resistance • 2500 volts isolation voltage • I/O compatible with integrated circuits | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
4N30 | 6 PIN DIP PHOTODARLINGTON PHOTOCOUPLER Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3 | Everlight 台湾亿光 | | |
4N30 | OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package. FEATURES • Options :- 10mm lead spread - add G after part n | ISOCOM 英国安数光 | | |
4N30 | OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT 文件：93.34 Kbytes Page：3 Pages | ISOCOM 英国安数光 | | |
4N30 | GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS 文件：136.49 Kbytes Page：6 Pages | QT | | |
4N30 | 6 PIN PHOTODARLINGTON 文件：331.7 Kbytes Page：13 Pages | Everlight 台湾亿光 | | |
4N30 | 4A, 300V N-CHANNEL POWER MOSFET | UTC 友顺 | | |
4N30 | General Purpose 6-Pin Photodarlington Optocoupler 文件：222.28 Kbytes Page：13 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
4N30 | 光耦合器-Darlington Transistor | lightning 亮牛半导体 | | |
4N30 | Photo Coupler : Darlington | CTMICRO | | |
GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ VDE 0884 approval available as a test op | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ VDE 0884 approval available as a test op | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ VDE 0884 approval available as a test op | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ VDE 0884 approval available as a test op | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
4A, 300V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 4N30 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. ■ FEATURES * RDS(ON) | UTC 友顺 | | ||
4A, 300V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 4N30 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. ■ FEATURES * RDS(ON) | UTC 友顺 | | ||
4A, 300V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 4N30 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. ■ FEATURES * RDS(ON) | UTC 友顺 | | ||
4A, 300V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 4N30 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. ■ FEATURES * RDS(ON) | UTC 友顺 | | ||
General Purpose 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ VDE 0884 approval available as a test op | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
General Purpose 6-Pin Photodarlington Optocoupler Description The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ UL, C-UL approved, Fil | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
General Purpose 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ VDE 0884 approval available as a test op | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
General Purpose 6-Pin Photodarlington Optocoupler Description The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ UL, C-UL approved, Fil | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
General Purpose 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ VDE 0884 approval available as a test op | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
6-Pin DIP General Purpose Photodarlington Optocoupler Features ■ High Sensitivity to Low Input Drive Current ■ Meets or Exceeds All JEDEC Registered Specifications ■ Safety and Regulatory Approvals: – UL1577, 4,170 VAC RMS for 1 Minute ■ DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications ■ Low Power Logic Circuits ■ Tel | ONSEMI 安森美半导体 | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
6 PIN PHOTODARLINGTON PHOTOCOUPLER Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3 | Everlight 台湾亿光 | | ||
6 PIN PHOTODARLINGTON PHOTOCOUPLER Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3 | Everlight 台湾亿光 | | ||
GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ VDE 0884 approval available as a test op | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
6 PIN PHOTODARLINGTON PHOTOCOUPLER Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3 | Everlight 台湾亿光 | | ||
6 PIN PHOTODARLINGTON PHOTOCOUPLER Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3 | Everlight 台湾亿光 | | ||
GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ VDE 0884 approval available as a test op | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
General Purpose 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ VDE 0884 approval available as a test op | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
6 PIN PHOTODARLINGTON PHOTOCOUPLER Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3 | Everlight 台湾亿光 | | ||
6 PIN PHOTODARLINGTON PHOTOCOUPLER Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3 | Everlight 台湾亿光 | | ||
GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ VDE 0884 approval available as a test op | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
4A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N30Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * RDS(ON) | UTC 友顺 | | ||
4A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N30Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * RDS(ON) | UTC 友顺 | | ||
4A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N30Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * RDS(ON) | UTC 友顺 | | ||
4A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N30Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * RDS(ON) | UTC 友顺 | | ||
4A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N30Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * RDS(ON) | UTC 友顺 | | ||
General Purpose 6-Pin Photodarlington Optocoupler 文件：222.28 Kbytes Page：13 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
包装：散装 描述：IO NICU PTAFG PU V0 REC RF/IF，射频/中频和 RFID RFI 和 EMI - 触头，簧片和衬垫 | ETC 知名厂家 | ETC | | |
General Purpose 6-Pin Photodarlington Optocoupler Portable electronics 文件：281.06 Kbytes Page：10 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
6 PIN PHOTODARLINGTON 文件：331.7 Kbytes Page：13 Pages | Everlight 台湾亿光 | | ||
6 PIN PHOTODARLINGTON 文件：331.7 Kbytes Page：13 Pages | Everlight 台湾亿光 | | ||
6 PIN PHOTODARLINGTON 文件：331.7 Kbytes Page：13 Pages | Everlight 台湾亿光 | |
4N30产品属性
- 类型
描述
- 型号
4N30
- 功能描述
晶体管输出光电耦合器 Optocouplers
- RoHS
否
- 制造商
Vishay Semiconductors
- 输入类型
DC
- 最大集电极/发射极电压
70 V
- 最大集电极/发射极饱和电压
0.4 V
- 绝缘电压
5300 Vrms
- 电流传递比
100 % to 200 %
- 最大正向二极管电压
1.65 V
- 最大输入二极管电流
60 mA
- 最大集电极电流
100 mA
- 最大功率耗散
100 mW
- 最大工作温度
+ 110 C
- 最小工作温度
- 55 C
- 封装/箱体
DIP-4
- 封装
Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
9150 |
原装现货,当天可交货,原型号开票 |
|||
QTC |
23+ |
NA |
5000 |
全新原装假一赔十 |
|||
MOTOR0L |
NEW |
DIP |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
FAIRCHILD/仙童 |
25+ |
DIP-6 |
64581 |
百分百原装现货 实单必成 欢迎询价 |
|||
FAIRCHILD |
12+ |
SOP-6 |
152 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD |
专业光耦 |
DIPSOP |
65800 |
光耦原装优势主营型号-可开原型号增税票 |
|||
ON |
24+ |
PDIP-6 |
25000 |
ON全系列可订货 |
|||
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
MOTOR0L |
DIP |
1000 |
正品原装--自家现货-实单可谈 |
||||
ON/安森美 |
25+ |
SMD-6 |
860000 |
明嘉莱只做原装正品现货 |
4N30规格书下载地址
4N30参数引脚图相关
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- 4N303SD
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- 4N30300
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- 4N2R6A
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- 4N29ST1
- 4N29SR2M
- 4N29SM
- 4N29SD
- 4N29S
- 4N29MT2
- 4N29MT1
- 4N29M
- 4N29A(SHORT,F)
- 4N29A
- 4N293SD
- 4N293S
- 4N29300
- 4N29_08
- 4N29(SHORT,F)
- 4N28-X
- 4N28X
- 4N28TVM
- 4N28S-TA1
- 4N28SR2VM
- 4N28SM
- 4N28S
- 4N28M
- 4N28
- 4N27XSM
- 4N27-X009
- 4N27X
- 4N27SR2M
- 4N27SM
- 4N27S
- 4N27M
4N30数据表相关新闻
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4N33
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2018-12-22
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