OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT

DESCRIPTION The 4N25, 4N26, 4N27, 4N28series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES • Options :- 10mm lead spread - add G after part no. Surface mount

4N25X - 光电耦合器, 晶体管输出, 1通道, DIP, 6 引脚, 60 mA, 5.3 kV, 20 %

The 4N25X is a 1-channel 6-pin Optically Coupled Isolator consists of infrared light emitting diode and NPN silicon phototransistor. It is suitable for industrial systems controllers, signal transmission between systems of different potentials and impedances. ·All electrical parameters 100% tested\n·60mA Forward current\n·6V Reverse voltage\n·200mW Total power dissipation;

封装/外壳：6-SMD，鸥翼 包装：管件 描述：OPTOISO 5.3KV TRANS W/BASE 6SMD 隔离器 光隔离器 - 晶体管，光电输出

6-Pin DIP Optoisolators Transistor Output

The4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infraredemitting diode optically coupled to amonolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specific

6-Pin DIP Optoisolators Transistor Output

The4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infraredemitting diode optically coupled to amonolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specific

Optocoupler with Phototransistor Output

Description The 4N25(G)V/ 4N35(G)V series consists of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and

6-Pin DIP Optoisolators Transistor Output

The M4N25 device consists of a gallium arsenide infrared emitting diode optically coupled to a silicon NPN phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specifications Applications • General Purp

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

■ TYPICAL RDS(on) = 0.7 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) ■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE &