6-Pin General Purpose Phototransistor Optocouplers

Description The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a standard plastic 6−pin dual−in−line package. Features • Minimum Current Transfer Ratio at IF = 10 mA, VCE = 10 V: ♦ 10 for 4N27M and 4N28M ♦ 20 for 4N2

丝印代码：4N25；6-Pin General Purpose Phototransistor Optocouplers

Features ■ Minimum Current Transfer Ratio at IF = 10 mA, VCE = 10 V: – 10% for 4N27M and 4N28M – 20% for 4N25M and 4N26M – 100% for 4N35M, 4N36M and 4N37M ■ Safety and Regulatory Approvals: – UL1577, 4,170 VAC RMS for 1 Minute – DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation

封装/外壳：6-SMD，鸥翼 包装：卷带（TR） 描述：OPTOISO 4.17KV TRANS W/BASE 6SMD 隔离器 光隔离器 - 晶体管，光电输出

General Purpose 6-Pin Phototransistor Optocouplers

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6-Pin DIP Optoisolators Transistor Output

The4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infraredemitting diode optically coupled to amonolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specific

6-Pin DIP Optoisolators Transistor Output

The4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infraredemitting diode optically coupled to amonolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specific

Optocoupler with Phototransistor Output

Description The 4N25(G)V/ 4N35(G)V series consists of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and

6-Pin DIP Optoisolators Transistor Output

The M4N25 device consists of a gallium arsenide infrared emitting diode optically coupled to a silicon NPN phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specifications Applications • General Purp

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

■ TYPICAL RDS(on) = 0.7 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) ■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE &