丝印代码：433E；30V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V, ID@-10A

丝印代码：433E；30V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V, ID@-10A

SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 8.0 GHz

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SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 8 GHz

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LC2MOS Precision Quad SPST Switches

GENERAL DESCRIPTION The ADG431, ADG432 and ADG433 are monolithic CMOS devices comprising four independently selectable switches. They are designed on an enhanced LC2MOS process which provides low power dissipation yet gives high switching speed and low on resistance. The on resistance profile is

PNP SILICON EPIBASE TRANSISTORS

PNP Silicon Epibase Transistors

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in car-radio output stages. The complementary PNP types are BD43

N-CHANNEL POWER MOSFETS

FEATURES • Low RDs(on) at high voltage • Improved inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysilicon gate cell structure • Low input capactiance • Extended safe operating area • Improved high temperature reliablitiy • TO-3 package (High vol

1.0 mm X 4.0 mm Series

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