位置:首页 > IC中文资料第12366页 > 423B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
423B | Low Barrier Schottky Diode Detectors Low Barrier Schottky Diode Detectors Agilent offers a complete family of high performance Low Barrier Schottky Diode Detectors which cover the 10 MHz to 26.5 GHz frequency range. These general purpose components are widely used for CW and pulsed power detection, leveling of sweepers, and frequenc | HP 安捷伦 | ||
423B | Low Barrier Schottky Diode Detectors | HP 安捷伦 | ||
Low Barrier Schottky Diode Detectors Low Barrier Schottky Diode Detectors Agilent offers a complete family of high performance Low Barrier Schottky Diode Detectors which cover the 10 MHz to 26.5 GHz frequency range. These general purpose components are widely used for CW and pulsed power detection, leveling of sweepers, and frequenc | HP 安捷伦 | |||
Low Barrier Schottky Diode Detectors Low Barrier Schottky Diode Detectors Agilent offers a complete family of high performance Low Barrier Schottky Diode Detectors which cover the 10 MHz to 26.5 GHz frequency range. These general purpose components are widely used for CW and pulsed power detection, leveling of sweepers, and frequenc | HP 安捷伦 | |||
AM band-switching diode DESCRIPTION Planar band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. FEATURES • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω. APPLICATION • Band switch | PHILIPS 飞利浦 | |||
AM band-switching diode DESCRIPTION Leadless diode in a hermetically-sealed glass SOD80C SMD package with lead/tin plated metal discs at each end. FEATURES • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω | PHILIPS 飞利浦 | |||
High Voltage Transistors(PNP) High Voltage Transistors PNP Silicon | MOTOROLA 摩托罗拉 | |||
High Voltage Transistors(PNP Silicon) High Voltage Transistors PNP Silicon | ONSEMI 安森美半导体 | |||
POWER TRANSISTOR NPN SILICON High-Voltage NPN Silicon Transistor . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc • Gain Specified to 3.5 Amp • High Frequency Response to 2.5 MHz | ONSEMI 安森美半导体 |
423B产品属性
- 类型
描述
- 型号
423B
- 制造商
AGILENT TECHNOLOGIES, INC.
- 功能描述
LOW-BARRIER SCHOTTKY DIODE DETECTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HP |
24+ |
NBNC |
1 |
423B规格书下载地址
423B参数引脚图相关
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423B数据表相关新闻
415-0038-024
进口代理
2025-3-264301.1401
4301.1401
2023-11-3430002-501
优势渠道
2023-6-2415-0059-024
优势渠道
2023-5-29430156070736
430156070736,全新原装当天发货或门市自取0755-82732291.
2020-3-94-1393122-4原装TE继电器
只做原装,假一罚十,可开16%增值税票。TE.NXP.ON.Renesas.Microchip.英飞凌.ALLEGRO
2019-3-13
DdatasheetPDF页码索引
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