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4082价格

参考价格:¥64.5955

型号:4082 品牌:Apex 备注:这里有4082多少钱,2026年最近7天走势,今日出价,今日竞价,4082批发/采购报价,4082行情走势销售排行榜,4082报价。
型号 功能描述 生产厂家 企业 LOGO 操作
4082

B - Indoor keyed

文件:82.31 Kbytes Page:4 Pages

LEMO

雷莫

4082

B - Indoor keyed

文件:91.13 Kbytes Page:4 Pages

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4082

B - Indoor keyed

文件:79.11 Kbytes Page:4 Pages

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4082

B - Indoor keyed

文件:211.87 Kbytes Page:4 Pages

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4082

B - Indoor keyed

文件:219.46 Kbytes Page:5 Pages

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4082

B - Indoor keyed

文件:210.18 Kbytes Page:4 Pages

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4082

B - Indoor keyed

文件:221.81 Kbytes Page:5 Pages

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4082

B - Indoor keyed

文件:213.63 Kbytes Page:4 Pages

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4082

B - Indoor keyed

文件:92.29 Kbytes Page:4 Pages

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4082

B - Indoor keyed

文件:86.57 Kbytes Page:4 Pages

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4082

B - Indoor keyed

文件:79.67 Kbytes Page:4 Pages

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4082

B - Indoor keyed

文件:220.66 Kbytes Page:5 Pages

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4082

B - Indoor keyed

文件:76.56 Kbytes Page:4 Pages

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4082

B - Indoor keyed

文件:92.3 Kbytes Page:4 Pages

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4082

B - Indoor keyed

文件:92.31 Kbytes Page:4 Pages

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4082

B - Indoor keyed

文件:222.67 Kbytes Page:5 Pages

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4082

B - Indoor keyed

文件:209.8 Kbytes Page:4 Pages

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4082

B - Indoor keyed

文件:211.33 Kbytes Page:4 Pages

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4082

B - Indoor keyed

文件:219.69 Kbytes Page:5 Pages

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4082

B - Indoor keyed

文件:211.84 Kbytes Page:4 Pages

LEMO

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4082

包装:散装 描述:COLLECTION TUBE FOR DSV80 焊接,拆焊,返修产品 配件

ATG

丝印代码:4082IBZ;80V, 1.25A Peak Current H-Bridge FET Driver

文件:624.87 Kbytes Page:14 Pages

RENESAS

瑞萨

MOS FIELD-EFFECT TRANSISTOR

DESCRIPTION: The ASI 40822 is a N-Channel DualGate Depletion Type Transistor With Monolithic Gate Protection Diodes, used in RF,IF Amplifier and Mixer Applications up to 150 MHz.

ASI

Power Transistors

Features • 2N5954. 2N5955, 2N5956 complements to 2N6372. 2N6373, 2N6374 • Low saturation voltages • Maximum-safe-areaof-operation curves • Thermal-cycle ratings • Hermetically·sealed JEDEC TO·66 package • High gain at high current

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon N-P-N and P-N-P Medium-Power Transistors

Silicon N-P-N AND P-N-P Medium-Power Transistor General-Purpose Types for Switching Applications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

80V, 1.25A Peak Current H-Bridge FET Driver

The HIP4082 is a medium frequency, medium voltage H-Bridge N-Channel MOSFET driver IC, available in 16 lead plastic SOIC (N) and DIP packages.\nSpecifically targeted for PWM motor control and UPS applications, bridge based designs are made simple and flexible with the HIP4082 H-bridge driver. With o • Independently Drives 4 N-Channel FET in Half Bridge or\n   Full Bridge Configurations\n• Bootstrap Supply Max Voltage to 95VDC\n• Drives 1000pF Load in Free Air at 50°C with Rise and Fall\n   Times of Typically 15ns\n• User-Programmable Dead Time (0.1 to 4.5µs)\n• DIS (Disable) Overrides Input Con;

RENESAS

瑞萨

包装:散装 描述:B555 7X10 WHT/RED 标签,标志,护栏,标识 标志,铭牌,招贴

ETC

知名厂家

MOSFET TRANSISTORS DUAL-GATE N-CHANNEL

文件:88 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MOSFET TRANSISTORS DUAL-GATE N-CHANNEL

文件:88 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MOSFET TRANSISTORS DUAL-GATE N-CHANNEL

文件:88 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

FIELD-EFFECT TRANSISTOR

文件:108.13 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

FIELD-EFFECT TRANSISTOR

文件:108.13 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans RF MOSFET N-CH 18V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

FIELD-EFFECT TRANSISTOR

文件:108.13 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon N-P-N and P-N-P Medium-Power Transistors

文件:203.32 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans GP BJT PNP 85V 8A

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Parametric Test System

文件:297.74 Kbytes Page:21 Pages

KEYSIGHT

是德科技

Flash Memory Cell Parametric Test System

文件:324.91 Kbytes Page:23 Pages

KEYSIGHT

是德科技

80V, 1.25A Peak Current H-Bridge FET Driver

文件:624.87 Kbytes Page:14 Pages

RENESAS

瑞萨

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

PANASONIC

松下

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Extremely low noise voltage caused from diode (1/3 to 1/10 of our conventional MAZ4000 series) • Extremely good rising performance (in the low-current range) • Easy-to-identify the zener-voltage rank by the color bands • Easy

PANASONIC

松下

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

PANASONIC

松下

J-FET INPUT DUAL OPERATIONAL AMPLIFIER???????

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

J-FET INPUT DUAL OPERATIONAL AMPLIFIER???????

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

替换型号 功能描述 生产厂家 企业 LOGO 操作

General Purpose NPN Transistor Arrays

INTERSIL

General Purpose NPN Transistor Arrays

INTERSIL

General Purpose NPN Transistor Arrays

INTERSIL

General Purpose NPN Transistor Array

INTERSIL

General Purpose NPN Transistor Array

INTERSIL

General Purpose NPN Transistor Array

INTERSIL

General Purpose NPN Transistor Array

INTERSIL

LM3045/LM3046/LM3086 Transistor Arrays

NSC

国半

LM3045/LM3046/LM3086 Transistor Arrays

NSC

国半

LM3045/LM3046/LM3086 Transistor Arrays

NSC

国半

Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially-Connected Transistor Pair)

NTE

TRANSISTOR ARRAY

ETC1

TRANSISTOR ARRAY

ETC1

4082产品属性

  • 类型

    描述

  • Maximum Power Dissipation:

    330mW

  • Maximum Gate Source Voltage:

    9V

  • Maximum Drain Source Voltage:

    20V

  • Maximum Continuous Drain Current:

    0.05A

  • Configuration:

    Single Dual Gate

  • Channel Type:

    N

  • Category:

    Small Signal

更新时间:2026-5-25 10:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
DIP
350
40829
25+
13
13
WURTH/伍尔特
26+
SMD
1200
全新原装数量均有多电话咨询
WE
24+
SMD
30980
原装现货/放心购买
STEWARD
23+
SMD
9868
专做原装正品,假一罚百!
WE
25+23+
SMD
23491
绝对原装正品全新进口深圳现货
SCL
24+
原厂封装
1032
原装现货假一罚十
WE
1023
SMD
950
一级代理,专注军工、汽车、医疗、工业、新能源、电力
WE
23+
SMD
50000
全新原装正品现货,支持订货
INTERSIL
23+
SMD
8650
受权代理!全新原装现货特价热卖!

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