RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) • High Power Gain : GPS = 19.0 dB TYP. (f = 470 MHz) • Suitable for use as RF amplifier in CATV tuner. • Automatically Mounting : Embossed Type Taping

MOS FIELD EFFECT TRANSISTOR

RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) • High Power Gain : GPS = 19.0 dB TYP. (f = 470 MHz

RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz) • High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz) • Suitable for use as RF amplifier in UHF TV tuner. • Automatically Mounting : Embossed Type Taping • Package : 4 Pins Mini Mold

MOS FIELD EFFECT TRANSISTOR

RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz) • High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz) • Suitable for use as RF amplif

RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD

FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) • High Power Gain : GPS = 19.0 dB TYP. (f = 470 MHz) • Suitable for use as RF amplifier in CATV tuner. • Automaticall

MOS FIELD EFFECT TRANSISTOR

RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) • High Power Gain : GPS = 19.0 dB TYP. (f = 4

MOS FIELD EFFECT TRANSISTOR

RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz) • High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz) • Suitable for uses as RF

RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD

FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz) • High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz) • Suitable for uses as RF amplifier in UHF TV tuner. • Automatically Mounting : Embossed Type Taping • Small Package : 4 Pins Sup

N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)

TV Tuner, UHF RF Amplifier Applications Superior cross modulation performance. Low reverse transfer capacitance: Crss = 0.015 pF (typ.) Low noise figure: NF = 1.9dB (typ.)

N CHANNEL DUAL GATE MOS TYPE (TV, FM TUNER, VHF, UHF RF AMPLIFIER APPLICATIONS)

TV TUNER, VHF RF AMPLIFIER APPLICATIONS FM TUNER APPLICATIONS TV TUNER, UHF RF AMPLIFIER APPLICATIONS Superior Cross Modulation Performance. Low Noise Figure : NF = 3.0dB(Typ.)

N CHANNEL DUAL GATE MOS TYPE (TV, FM TUNER VHF RF AMPLIFIER APPLICATIONS)

TV TUNER, VHF RF AMPLIFIER APPLICATIONS FM TUNER APPLICATIONS ● Super Cross Modulation Performance. ● Low Reverse Transfer Capacitance : Crss = 0.015pF (Typ.) ● Low Noise Figure : NF = 1.1dBB (Typ.)

N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF, VHF WIDE BAND RF AMPLIFIER APPLICATIONS)

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE TV TUNER, UHF RF AMPLIFIER APPLICATIONS TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS