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3SK16价格

参考价格:¥0.8450

型号:3SK160 品牌:TOSHIBA 备注:这里有3SK16多少钱,2026年最近7天走势,今日出价,今日竞价,3SK16批发/采购报价,3SK16行情走势销售排行榜,3SK16报价。
型号 功能描述 生产厂家 企业 LOGO 操作

GaAs N-channel Dual Gate MES FET

Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.) at 800MHz • High gain: Ga

SONYSony Corporation

索尼

GaAs N-channel Dual Gate MES FET

Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.) at 800MHz • High gain: Ga

SONYSony Corporation

索尼

GaAs N-channel Dual Gate MES FET

Description\nThe 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. • Low voltage operation\n• Low noise: NF = 1.2dB (typ.) at 800MHz\n• High gain: Ga = 20dB (typ) at 800MHz\n• High stabilityApplication\nUHF band amplifier, mixer and oscillator;

SONYSony Corporation

索尼

GaAs N-channel Dual Gate MES FET

Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.) at 800MHz • High gain: Ga

SONYSony Corporation

索尼

GaAs N-channel Dual Gate MES FET

Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.) at 800MHz • High gain: Ga

SONYSony Corporation

索尼

GaAs N-channel Dual Gate MES FET

Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance. Features • Low voltage operation •

SONYSony Corporation

索尼

GaAs N-channel Dual Gate MES FET

Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance. Features • Low voltage operation •

SONYSony Corporation

索尼

GaAs N-channel Dual Gate MES FET

Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance. Features • Low voltage operation •

SONYSony Corporation

索尼

GaAs N-channel Dual Gate MES FET

Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance. Features • Low voltage operation •

SONYSony Corporation

索尼

GaAs N-channel Dual Gate MES FET

SONYSony Corporation

索尼

GaAs N-channel Dual Gate MES FET

SONYSony Corporation

索尼

3SK16产品属性

  • 类型

    描述

  • 型号

    3SK16

  • 制造商

    SONY

  • 制造商全称

    Sony Corporation

  • 功能描述

    GaAs N-channel Dual Gate MES FET

更新时间:2026-7-29 19:36:00
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原装进口现货库存专业工厂研究所配单供货

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