MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MOS FIELD EFFECT TRANSISTOR

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • High Power Gain : Gps = 23.0 dB TYP. (@ = 900 MHz) • Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz) • Suitable for use as RF amplifier in UHF TV tuner. • Automatically Mounting

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • High Power Gain : Gps = 23.0 dB TYP. (@ = 900 MHz) • Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz) • Suitable for use as RF amplifier in UHF TV tuner. • Automatically Mounting : Em

MOS FIELD EFFECT TRANSISTOR

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High Gps : 18 dB TYP. • Low NF : 2.7 dB TYP.

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD

FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High Gps : 18 dB TYP. • Low NF : 2.7 dB TYP.

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD

FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High Gps : 18 dB TYP. • Low NF : 2.7 dB TYP.