MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD

MOS FIELD EFFECT TRANSISTORFEATURES\n• Suitable for use as RF amplifier in VHF TV tuner.\n• Low Crss: 0.05 pF TYP.\n• High Gps: 23 dB TYP.\n• Low NF : 1.3 dB TYP. • Suitable for use as RF amplifier in VHF TV tuner.\n• Low Crss: 0.05 pF TYP.\n• High Gps: 23 dB TYP.\n• Low NF : 1.3 dB TYP.\n ;

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • High Power Gain : Gps = 23.0 dB TYP. (@ = 900 MHz) • Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz) • Suitable for use as RF amplifier in UHF TV tuner. • Automatically Mounting : Em

MOS FIELD EFFECT TRANSISTOR

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • High Power Gain : Gps = 23.0 dB TYP. (@ = 900 MHz) • Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz) • Suitable for use as RF amplifier in UHF TV tuner. • Automatically Mounting

丝印代码：U65；MOS FIELD EFFECT TRANSISTOR

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High Gps : 18 dB TYP. • Low NF : 2.7 dB TYP.

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD

FEATURES\n• Suitable for use as RF amplifier in UHF TV tuner.\n• Low Crss : 0.02 pF TYP.\n• High Gps : 18 dB TYP.\n• Low NF : 2.7 dB TYP. • Suitable for use as RF amplifier in UHF TV tuner.\n• Low Crss : 0.02 pF TYP.\n• High Gps : 18 dB TYP.\n• Low NF : 2.7 dB TYP. ;

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD

FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High Gps : 18 dB TYP. • Low NF : 2.7 dB TYP.

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD

FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High Gps : 18 dB TYP. • Low NF : 2.7 dB TYP.

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD