3.0A,650V  N-CHANNEL  SUPER-JUNCTION MOSFET

The UTC 3NM65-SH is an Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance.  The UTC 3NM65-SH is universally applied in electronic lamp ballasts based on half bridge topology, high effici R DS(ON)  < 1.8 @ V GS  = 10 V, ID  = 1.5 AFast switching capabilityAvalanche energy specifiedImproved dv/dt capability, high ruggedness;

3A, 650V N-CHANNEL SUPER-JUNCTION MOSFET

The UTC 3NM65-FD is a Super Junction MOSFET Structureand is designed to have better characteristics, such as fastswitching time, low gate charge, low on-state resistance and havea high rugged avalanche characteristics. This power MOSFET isusually used at high speed switching applications in powersup RDS(ON) < 2.0Ω @ VGS=10V, ID=1.5A Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness;