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3N163-E价格
参考价格：￥103.7629
型号：3N163-E3 品牌：VISHAY 备注：这里有3N163-E多少钱，2026年最近7天走势，今日出价，今日竞价，3N163-E批发/采购报价，3N163-E行情走势销售排行榜，3N163-E报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MOSFET P-CH 40V 50MA TO-72 | VISHAYVishay Siliconix 威世威世科技公司 |   | ||
(SINGLE, DUAL) MOS FET P-CHANNEL, ENHANCEMENT MOS/FET/P-CHANNEL, ENHANCEMENT, SINGLE DUAL MOS/FET/P-CHANNEL, ENHANCEMENT | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
P-CHANNEL JFET GENERAL INFORMATION/CROSS REFERENCES | INTERSIL | | ||
P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch FEATURES • Very High Input Impedance • High Gate Breakdown • Fast Switching • Low Capacitance | CALOGIC | | ||
P-CHANNEL ENHANCEMENT MODE FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE | LINEAR | | ||
an enhancement mode P-Channel Mosfet 文件：366.63 Kbytes Page：1 Pages | MICROSS | |
3N163-E产品属性
- 类型
描述
- 型号
3N163-E
- 功能描述
MOSFET 40V 5mA 375mW
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
25+ |
66880 |
原装正品，欢迎询价 |
|||||
23+ |
TO220 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
UTC |
2450+ |
TO-252T/R |
9850 |
只做原装正品现货或订货假一赔十! |
|||
UTC/友顺 |
24+ |
TO-252 |
50000 |
只做原装，欢迎询价，量大价优 |
|||
VIS |
24+ |
32 |
|||||
NKGLBDT/南科 |
25+ |
SOT89SOT23 |
98192 |
一站式BOM配单 |
|||
NXB |
26+ |
SMD |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
MOT |
2023+ |
CAN4 |
50000 |
原装现货 |
|||
NA |
CAN4 |
992 |
专营CAN铁帽仔 |
||||
MOT |
2602+ |
CAN4 |
8985 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
3N163-E规格书下载地址
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国产 现货100K
2022-7-5
DdatasheetPDF页码索引
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