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3N163-E价格
参考价格：￥103.7629
型号：3N163-E3 品牌：VISHAY 备注：这里有3N163-E多少钱，2026年最近7天走势，今日出价，今日竞价，3N163-E批发/采购报价，3N163-E行情走势销售排行榜，3N163-E报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MOSFET P-CH 40V 50MA TO-72 | VISHAYVishay Siliconix 威世威世科技公司 |   | ||
P-CHANNEL ENHANCEMENT MODE FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE | LINEAR | | ||
P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch FEATURES • Very High Input Impedance • High Gate Breakdown • Fast Switching • Low Capacitance | CALOGIC | | ||
P-CHANNEL JFET GENERAL INFORMATION/CROSS REFERENCES | INTERSIL | | ||
(SINGLE, DUAL) MOS FET P-CHANNEL, ENHANCEMENT MOS/FET/P-CHANNEL, ENHANCEMENT, SINGLE DUAL MOS/FET/P-CHANNEL, ENHANCEMENT | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
an enhancement mode P-Channel Mosfet The 3N163 is an enhancement mode P-Channel Mosfet The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch 3N163 Features: ◾ Very high Input Impedance ◾ Low Capacitance ◾ High Gain ◾ High Gate Breakdown Voltage ◾ Low Threshold Voltage | MICROSS | |
3N163-E产品属性
- 类型
描述
- 型号
3N163-E
- 功能描述
MOSFET 40V 5mA 375mW
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SSI |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
SILICONIX |
24+ |
TO-72 |
6010 |
只做原装正品 |
|||
原厂正品 |
23+ |
SOP/DIP |
5000 |
原装正品,假一罚十 |
|||
MOTOROLA |
CAN |
1696 |
专营CAN铁帽仔 |
||||
Vishay |
25+ |
TO-72 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
MOT |
2023+ |
CAN4 |
50000 |
原装现货 |
|||
25+ |
3 |
公司优势库存 热卖中! |
|||||
SILICONIX |
24+/25+ |
1000 |
原装正品现货库存价优 |
||||
Vishay Siliconix |
22+ |
TO206AF TO724 Metal Can |
9000 |
原厂渠道,现货配单 |
|||
VIS |
24+ |
32 |
3N163-E规格书下载地址
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DdatasheetPDF页码索引
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