丝印代码：3N04A-AP；40V N-Channel Enhancement Mode MOSFET

Features - VDS = 40V ID =3A - RDS(ON)

N-Channel 4 -V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested APPLICATIONS • Synchronous Rectification • Power Supplies

N-Channel 4 -V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested APPLICATIONS • Synchronous Rectification • Power Supplies

N-Channel 4 -V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested APPLICATIONS • Synchronous Rectification • Power Supplies

N-Channel 4 -V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested APPLICATIONS • Synchronous Rectification • Power Supplies

陶瓷保险丝管（延时型）Ceramic Tube Fuse(Time-lag)UL/VDE/CCC Approved

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Power MOSFET 3 Amps, 40 Volts

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. These devices are designed for use in low voltag

DUAL TMOS POWER MOSFET 3.4 AMPERES 40 VOLTS

MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes