SurfaceMountTRANSZORB®TransientVoltageSuppressors

FEATURES •Availableinbidirectionalpolarityonly •3000Wpeakpulsepowercapabilitywitha (10/1000μs)waveform •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresistance •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Notrecommende

TOSHIBAField-EffectTransistorSiliconNChannelMOSType

○High-SpeedSwitchingApplications •1.5-Vdrive •LowON-resistance:Ron=1.52Ω(max)(@VGS=1.5V) :Ron=1.14Ω(max)(@VGS=1.8V) :Ron=0.85Ω(max)(@VGS=2.5V) :Ron=0.66

TOSHIBAField-EffectTransistorSiliconN-ChannelMOSType

○High-SpeedSwitchingApplications •1.5-Vdrive •LowON-resistance:Ron=1.52Ω(max)(@VGS=1.5V) :Ron=1.14Ω(max)(@VGS=1.8V) :Ron=0.85Ω(max)(@VGS=2.5V) :Ron=0.66Ω(m

SurfaceMountTRANSZORB®TransientVoltageSuppressors

文件：91.78 Kbytes Page：4 Pages

TOSHIBAField-EffectTransistorSiliconN-ChannelMOSType

文件：221.59 Kbytes Page：5 Pages