Silicon-Power-Z-Diodes (non-planar technology)

Silicon-Power-Zener Diodes (non-planar technology) • Maximum power dissipation 3 W • Nominal Z-voltage 1...200 V • Plastic case DO-15 • Weight approx. 0.4 g • Plastic material has UL classification 94V-0

Zener silicon diodes

Maximum Power Dissipation: 3 W Nominal Z-voltage: 1 to 200 V

GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts)

FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • High temperature soldering : 260°C /10 seconds at terminals • Pb fre

GLASS PASSIVATED JUNCTION SILICON ZENER DIODES

FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • High temperature soldering : 260°C /10 seconds at terminals • Pb fre

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts FEATURES ● Low profile package ● Built-in strain relief ● Glass passivated junction ● Low inductance ● Excellent clamping capability ● Typical ID less than 1 A above 11V ● High temperature soldering : 260°C/10 seconds at terminals ● Plastic pack