Silicon-Power-Z-Diodes (non-planar technology)

Silicon-Power-Zener Diodes (non-planar technology) • Maximum power dissipation 3 W • Nominal Z-voltage 1...200 V • Plastic case DO-15 • Weight approx. 0.4 g • Plastic material has UL classification 94V-0

GLASS PASSIVATED JUNCTION SILICON ZENER DIODES

FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • High temperature soldering : 260°C /10 seconds at terminals • Pb fre

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts FEATURES ● Low profile package ● Built-in strain relief ● Glass passivated junction ● Low inductance ● Excellent clamping capability ● Typical ID less than 1 A above 11V ● High temperature soldering : 260°C/10 seconds at terminals ● Plastic pack

GLASS PASSIVATED JUNCTION SILICON ZENER DIODES

文件：294.04 Kbytes Page：4 Pages

Axial lead diode Zener silicon diodes

文件：46.48 Kbytes Page：1 Pages