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isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·DC Current Gain- : hFE= 50~200(Min.)@IC= 0.5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC= 0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·

ISC

无锡固电

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