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位置：首页 > IC中文资料 > 3DD2

3DD2晶体管资料

  • 3DD20别名：3DD20三极管、3DD20晶体管、3DD20晶体三极管

  • 3DD20生产厂家：中国大陆半导体企业

  • 3DD20制作材料：Si-NPN

  • 3DD20性质：低频或音频放大 （LF）_功率放大 （PA）

  • 3DD20封装形式：直插封装

  • 3DD20极限工作电压：60V

  • 3DD20最大电流允许值：3A

  • 3DD20最大工作频率：<1MHZ或未知

  • 3DD20引脚数：3

  • 3DD20最大耗散功率：30W

  • 3DD20放大倍数：

  • 3DD20图片代号：B-12

  • 3DD20vtest：60

  • 3DD20htest：999900

  • 3DD20atest：3

  • 3DD20wtest：30

  • 3DD20代换 3DD20用什么型号代替：BD177,BD935,BDT29A,R4922,2SD880,2SD1354,

型号 功能描述 生产厂家 企业 LOGO 操作
3DD200

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High collector-base breakdown voltage : VCBO=250V APPLICATIONS ·For TV horizontal output applications

ISC

无锡固电

3DD201

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High collector-base breakdown voltage : VCBO=350V APPLICATIONS • For TV horizontal output applications

ISC

无锡固电

3DD204

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·DC Current Gain- : hFE= 50~200(Min.)@IC= 0.5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC= 0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·

ISC

无锡固电

3DD207

Silicon NPN Power Transistors

Silicon NPN Power Transistor DESCRIPTION · With TO-3 package · Low collector saturation voltage APPLICATIONS · For audio amplifier applications

ISC

无锡固电

3DD2101

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2101 FOR LOW FREQUENCY

FEATURES 3DD2101 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product. APPLICATIONS Switching power supply for color TV.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

3DD2101

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2101 FOR LOW FREQUENCY

FEATURES\n3DD2101 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture:\nhigh voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product.APPLICATIONS\nSwitching power supply for color TV. 3DD2101 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture:\nhigh voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product.;

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

3DD2101-O-A-N-D

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2101 FOR LOW FREQUENCY

FEATURES 3DD2101 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product. APPLICATIONS Switching power supply for color TV.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

3DD2102

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2102 FOR LOW FREQUENCY

FEATURES • 3DD2102 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product. APPLICATIONS • Horizontal deflection output for color TV.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

3DD2102-O-A-N-D

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2102 FOR LOW FREQUENCY

FEATURES • 3DD2102 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product. APPLICATIONS • Horizontal deflection output for color TV.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

3DD2103

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2103 FOR LOW FREQUENCY

FEATURES\n3DD2103 is high breakdown voltage of NPN bipolar transistor.\nThe main process of manufacture:\n high voltage mesa type process,\n triple diffused process etc.,\n  adoption of fully plastic packge.\nRoHS product.APPLICATIONS\nSwitching power supply for color TV. 3DD2103 is high breakdown voltage of NPN bipolar transistor.\nThe main process of manufacture:\n high voltage mesa type process,\n triple diffused process etc.,\n  adoption of fully plastic packge.\nRoHS product.;

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

3DD2103

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2103 FOR LOW FREQUENCY

FEATURES 3DD2103 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product. APPLICATIONS Switching power supply for color TV.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

3DD2103-O-A-N-D

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2103 FOR LOW FREQUENCY

FEATURES 3DD2103 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product. APPLICATIONS Switching power supply for color TV.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

3DD2109

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2109 FOR LOW FREQUENCY

FEATURES • 3DD2109 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product. APPLICATIONS • Switching power supply for color TV

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

3DD2109-O-A-N-D

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2109 FOR LOW FREQUENCY

FEATURES • 3DD2109 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product. APPLICATIONS • Switching power supply for color TV

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

3DD2553

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2553 FOR LOW FREQUENCY

3DD2553 is high breakdown voltage of NPNbipolar transistor. The main process of manufacture: high voltage mesa type process, riple diffused process etc., adoption of fully plastic packge. RoHS product.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

3DD2553-O-A-N-D

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2553 FOR LOW FREQUENCY

3DD2553 is high breakdown voltage of NPNbipolar transistor. The main process of manufacture: high voltage mesa type process, riple diffused process etc., adoption of fully plastic packge. RoHS product.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

3DD202A

isc Silicon NPN Power Transistor

文件：221 Kbytes Page：2 Pages

ISC

无锡固电

3DD202B

isc Silicon NPN Power Transistor

文件：220.31 Kbytes Page：2 Pages

ISC

无锡固电

3DD207_18

isc Silicon NPN Power Transistor

文件：221.23 Kbytes Page：2 Pages

ISC

无锡固电

3DD207I

isc Silicon NPN Power Transistor

文件：181.51 Kbytes Page：2 Pages

ISC

无锡固电

3DD208

Collector-Emitter Breakdown Voltage-: V(BR)CEO= 200V(Min.)

文件：188.67 Kbytes Page：2 Pages

ISC

无锡固电

3DD209L

isc Silicon NPN Power Transistor

文件：260.779 Kbytes Page：2 Pages

ISC

无锡固电

3DD209L

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：654.83 Kbytes Page：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

3DD209L-O-AB-N-B

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：654.83 Kbytes Page：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

3DD209L-O-AN-N-B

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：654.83 Kbytes Page：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

3DD2102

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2102 FOR LOW FREQUENCY

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

3DD2553

3DD2553

文件：328.22 Kbytes Page：3 Pages

ISC

无锡固电

3DD2901

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2901 FOR LOW FREQUENCY

文件：152.18 Kbytes Page：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

3DD2901-O-A-N-D

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2901 FOR LOW FREQUENCY

文件：152.18 Kbytes Page：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

3DD2产品属性

  • 类型

    描述

  • Ic(A)：

    12

  • Pc(W)：

    120

  • BVcbo(V)：

    700

  • BVceo(V)：

    400

  • hfe：

    18~71

  • Package：

    TO-247

3DD2供应商更多...

更新时间：2026-5-24 11:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
现代芯城（深圳）科技有限公司
3DD201
26+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
询价

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3DD2规格书下载地址

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