isc Silicon NPN Power Transistor

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High Voltage Fast Switching NPN Power Transistor

FEATURES ● PC=1W(Mounted on ceramic substrate). ● High speed switching. ● Die size:1.34*1.34 ● Small flat package. APPLICATIONS ● Mainly used for compact electronic energy saving lamps, electronic ballast and mobile phone chargers power switch circuit

TRANSISTOR ( NPN )

FEATURES Power dissipation PCM: 1.25 W（T amb=25℃） Collector current ICM : 1.5A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range TJ，Tstg: -55℃to +150℃

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.5 W (Tamb=25℃) Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 700 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES ● High breakdown voltage ● High current capability ● High switching speed ● High reliability ● RoHS product APPLICATIONS ● Electronic ballasts ● High frequency switching power supply ● High frequency power transform ● Commonly power amplifier circuit

TRANSISTOR竊?NPN 竊

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