位置:首页 > IC中文资料 > 3CD6E

3CD6E晶体管资料

  • 3CD6E别名:3CD6E三极管、3CD6E晶体管、3CD6E晶体三极管

  • 3CD6E生产厂家:中国大陆半导体企业

  • 3CD6E制作材料:Si-PNP

  • 3CD6E性质:低频或音频放大 (LF)_功率放大 (L)

  • 3CD6E封装形式:直插封装

  • 3CD6E极限工作电压:150V

  • 3CD6E最大电流允许值:5A

  • 3CD6E最大工作频率:<1MHZ或未知

  • 3CD6E引脚数:2

  • 3CD6E最大耗散功率:50W

  • 3CD6E放大倍数

  • 3CD6E图片代号:E-44

  • 3CD6Evtest:150

  • 3CD6Ehtest:999900

  • 3CD6Eatest:5

  • 3CD6Ewtest:50

  • 3CD6E代换 3CD6E用什么型号代替

型号 功能描述 生产厂家 企业 LOGO 操作

Silicon PNP Power Transistors

文件:126.32 Kbytes Page:3 Pages

ISC

无锡固电

SUBMINIATURE — SEALED

Features l Enclosed switch complying with IP 6K7 l Silicon-free version available l Models available for operating temperatures up to 120°C l Rated for currents up to 10 amp at 250VAC l Range of auxiliary actuators available (can also be retrofitted) l Various contact materials available,

CHERRY

SUBMINIATURE — SEALED

Features l Enclosed switch complying with IP 6K7 l Silicon-free version available l Models available for operating temperatures up to 120°C l Rated for currents up to 10 amp at 250VAC l Range of auxiliary actuators available (can also be retrofitted) l Various contact materials available,

CHERRY

3CD6E芯片相关品牌

3CD6E数据表相关新闻