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Dual Transistor For Differential Amplify Application Silicon Npn Epitaxial Type

DESCRIPTION RT3C66M is a sillicon NPN epitaxial type dual transistor. It is designed for differential amplify application. FEATURE ● High Vceo Vceo=160V ● Good two elements characteristics hFE1/hFE2=1.0 typ | VBE1-VBE2| =2mV typ APPLICATION For differential amplify application.

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