MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 14 mΩ MAX. (VGS = 10 V, ID = 18 A) • Low Ciss

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 36A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 14mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 36A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOS FIELD EFFECT TRANSISTOR NP36N055HLE, NP36N055ILE, NP36N055SLE

SWITCHING CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 16

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 14 mΩ MAX. (VGS = 10 V, ID = 18 A) • Low Ciss