N-channel 650 V, 0.085 廓, 27 A, MDmesh??V Power MOSFET in D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching appli

丝印代码：I2PAK；isc N-Channel MOSFET Transistor

• FEATURES • With TO-262(I2PAK) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching

N-channel 650 V, 0.085 廓, 27 A, MDmesh??V Power MOSFET in D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

N-channel 650 V, 0.085 廓, 27 A, MDmesh??V Power MOSFET in D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a