丝印代码：352B；SURFACE MOUNT SILICON ZENER DIODES

FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Pb free product are available : 99 Sn

丝印代码：352B；5.0W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 5.0W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5 Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

丝印代码：352B；ZENER DIODE

Features · Glass Passivated Die Construction · 5.0W Power Dissipation · 3.3V – 200V Nominal Zener Voltage · 5 Standard Vz Tolerance · Low Inductance · For Use in Voltage Regulator or Reference · Plastic Case Material has UL Flammability Classification Rating 94V-0

丝印代码：352B；5.0W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 5.0W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5 Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

丝印代码：352B；SILICON ZENER DIODES

Features Low leakage current High reliability High peak reverse power dissipation Complete Voltage Range 3.3 to 200 Volts

丝印代码：352B；SILICON ZENER DIODES

Features Complete Voltage Range 3.3 to 200 Volts High peak reverse power dissipation High reliability Low leakage current Mechanical Data Case : SMB (DO-214AA) Molded plastic Epoxy : UL94V-O rate flame retardant Polarity : Color band denotes cathode end Mounting position : Any

丝印代码：352B；Surface Mount Zener Diodes

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丝印代码：352B；Surface Mount Zener Diodes

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Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount)

Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment to 175MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 75W

Square Type

文件：31.46 Kbytes Page：1 Pages

Square Type

文件：32 Kbytes Page：1 Pages

LinCMOSE DUAL DIFFERENTIAL COMPARATOR

文件：140.77 Kbytes Page：9 Pages