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丝印代码:G33N03;N-Channel Enhancement Mode Power MOSFET

Description The G33N03S uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application  Power switch DC/DC converters

GOFORD

谷峰半导体

100 Avalanche Tested

文件:227.09 Kbytes Page:7 Pages

SEMIHOW

Superior Avalanche Rugged Technology

文件:995.88 Kbytes Page:8 Pages

SEMIHOW

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