280 Watts • 50 Volts • 200 s, 20 S-Band Radar 3100 - 3500 MHz

GENERAL DESCRIPTION The 3135GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 13 dB gain, 280 Watts of pulsed RF output power at 200 S pulse width, 20 duty factor across the 3100 to 3500 MHz band. This hermetically sealed transis

RF/Microwave GaN on SiC Power Devices, Pallets and Modules

The 3135GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 13 dB gain, 280 Watts of pulsed RF output power at 200 ? S pulse width, 20% duty factor across the 3100 to 3500 MHz band. This hermetically sealed transistor is utilizes gold