GENERAL DESCRIPTION

The 3135GN-280LV is an internally matched, COMMON SOURCE,

class AB, GaN on SiC HEMT transistor capable of providing over 13 dB

gain, 280 Watts of pulsed RF output power at 200 S pulse width, 20

duty factor across the 3100 to 3500 MHz band. This hermetically sealed

transistor is utilizes gold metallization and eutectic attach to provide

highest reliability and superior ruggedness.

Market Application – High Power S-Band Pulsed Radar