丝印代码：310N65EC；650VN-ChannelSuperJunctionMOSFET

Feature: RDS(ON)Max,VGS@10V:310mΩ Easytouse/drive HighSpeedSwitchingandLowRDS(ON) 100AvalancheTested 100RgTested LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard MechanicalData Case:TO-263package Terminals:SolderableperMIL-STD-750,Method2026 Approx.W

丝印代码：310N65EC；650VN-ChannelSuperJunctionMOSFET

Feature: RDS(ON)Max,VGS@10V:310mΩ Easytouse/drive HighSpeedSwitchingandLowRDS(ON) 100AvalancheTested 100RgTested LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard MechanicalData Case:ITO-220AB-Fpackage Terminals:SolderableperMIL-STD-750,Method2026 App

丝印代码：310N65EC；650V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 310mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-220AB-L package  Terminals:

丝印代码：310N10F7；N-channel 100 V, 2.3 m廓 typ., 180 A STripFET??VII DeepGATE?? Power MOSFET in a TO-220 package

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文件：348.91 Kbytes Page：16 Pages