型号 功能描述 生产厂家&企业 LOGO 操作
30KP30

TRANSIENTVOLTAGESUPPRESSOR

VR:26-400Volts PPK:30,000Watts FEATURES: *Glasspassivatedjunctionchip *ExcellentClampingCapability *FastResponseTime *LowLeakageCurrent *Pb/RoHSFree

EIC

EIC discrete Semiconductors

EIC
30KP30

30kWTRANSIENTVOLTAGESUPPRESSOR

30kWTRANSIENTVOLTAGESUPPRESSOR •Availableinbothunidirectionalandbidirectionalconstruction(bidirectional“C”or“CA”suffix) •AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). •Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suf

DIGITRON

Digitron Semiconductors

DIGITRON
30KP30

AXIALLEADEDTRANSIENTVOLTAGESUPPRESSOR

Features ●Plasticpackage. ●Glasspassivatedjunction. ●Excellentclampingcapability. ●Repetitionrate(dutycycle):0.05. ●Lowincrementalsurgeresistance. ●Fastresponsetime:typicallylessthan1.0psfrom0volttoBV. ●Hightemperaturesolderingguaranteed:265°C/10seconds/.

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
30KP30

30kWTRANSIENTVOLTAGESUPPRESSOR

文件:210.73 Kbytes Page:5 Pages

DIGITRON

Digitron Semiconductors

DIGITRON

AXIALLEADEDTRANSIENTVOLTAGESUPPRESSOR

Features ●Plasticpackage. ●Glasspassivatedjunction. ●Excellentclampingcapability. ●Repetitionrate(dutycycle):0.05. ●Lowincrementalsurgeresistance. ●Fastresponsetime:typicallylessthan1.0psfrom0volttoBV. ●Hightemperaturesolderingguaranteed:265°C/10seconds/.

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

30kWTRANSIENTVOLTAGESUPPRESSOR

30kWTRANSIENTVOLTAGESUPPRESSOR •Availableinbothunidirectionalandbidirectionalconstruction(bidirectional“C”or“CA”suffix) •AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). •Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suf

DIGITRON

Digitron Semiconductors

DIGITRON

TRANSIENTVOLTAGESUPPRESSOR

VR:26-400Volts PPK:30,000Watts FEATURES: *Glasspassivatedjunctionchip *ExcellentClampingCapability *FastResponseTime *LowLeakageCurrent *Pb/RoHSFree

EIC

EIC discrete Semiconductors

EIC

30kWTransientVoltageSuppressor

DESCRIPTION TheseMicrosemi30kWTransientVoltageSuppressors(TVSs)aredesignedforapplicationsrequiringprotectionofvoltage-sensitiveelectronicdevicesthatmaybedamagedbyharshorseverevoltagetransientsincludinglightningperIEC61000-4-5andclasslevelswithvarioussourceimp

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Glasspassivatedjunction •30000WPeakPulsePowercapabilityon10/1000µswaveform •Excellentclampingcapability •Repetitionrate(dutycycle):0.05 •Lowincrementalsurgeresistance •Fastresp

MDE

MDE Semiconductor, Inc.

MDE

TRANSIENTVOLTAGESUPPRESSOR

FEATURES: *ExcellentClampingCapability *FastResponseTime *LowLeakageCurrent *Pb/RoHSFree

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

GlassPassivatedJunctionTransientVoltageSuppressor

FEATURES PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 Glasspassivatedjunction 30000WPeakPulsePower capabilityon10/1000μswaveform Excellentclampingcapability Repetitionrate(dutycycle):0.05 Lowincrementalsurgeresistance Fastresponsetime:t

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

30000WSurfaceMountTransientVoltageSuppressors

Features Glasspassivatedchip 30000WPeakpowercapabilityat10×1000μswaveformRepetition rate(dutycycle):0.01 TypicalIRlessthan2μAabove64V Lowleakage UniandBidirectionalunit Excellentclampingcapability Veryfastresponsetime RoHScompliant

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

TRANSIENTVOLTAGESUPPRESSOR

VR:26-400Volts PPK:30,000Watts FEATURES: *Glasspassivatedjunctionchip *ExcellentClampingCapability *FastResponseTime *LowLeakageCurrent *Pb/RoHSFree

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Glasspassivatedjunction •30000WPeakPulsePowercapabilityon10/1000µswaveform •Excellentclampingcapability •Repetitionrate(dutycycle):0.05 •Lowincrementalsurgeresistance •Fastresp

MDE

MDE Semiconductor, Inc.

MDE

TRANSIENTVOLTAGESUPPRESSOR

FEATURES: *ExcellentClampingCapability *FastResponseTime *LowLeakageCurrent *Pb/RoHSFree

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

30000WSurfaceMountTransientVoltageSuppressors

Features Glasspassivatedchip 30000WPeakpowercapabilityat10×1000μswaveformRepetition rate(dutycycle):0.01 TypicalIRlessthan2μAabove64V Lowleakage UniandBidirectionalunit Excellentclampingcapability Veryfastresponsetime RoHScompliant

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

GlassPassivatedJunctionTransientVoltageSuppressor

FEATURES PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 Glasspassivatedjunction 30000WPeakPulsePower capabilityon10/1000μswaveform Excellentclampingcapability Repetitionrate(dutycycle):0.05 Lowincrementalsurgeresistance Fastresponsetime:t

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

Glasspassivatedjunctionchip

Features ◇Glasspassivatedjunctionchip ◇ExcellentClampingCapability ◇FastResponseTime ◇LowLeakageCurrent ◇Pb/RoHSFree

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

Glasspassivatedjunctionchip

Features ◇Glasspassivatedjunctionchip ◇ExcellentClampingCapability ◇FastResponseTime ◇LowLeakageCurrent ◇Pb/RoHSFree

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

AXIALLEADEDTRANSIENTVOLTAGESUPPRESSOR

Features ●Plasticpackage. ●Glasspassivatedjunction. ●Excellentclampingcapability. ●Repetitionrate(dutycycle):0.05. ●Lowincrementalsurgeresistance. ●Fastresponsetime:typicallylessthan1.0psfrom0volttoBV. ●Hightemperaturesolderingguaranteed:265°C/10seconds/.

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

AxialLeadTransientVoltageSuppressors(TVS)

Description The30KPseriesisdesignedspecificallytoprotectsensitiveelectronicequipmentfromvoltagetransientsinducedbylightningandothertransientvoltageevents. Features ◆GlasspassivatedchipjunctioninP600Package ◆Lowleakage ◆UniandBidirectionalunit ◆Excellentcla

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

30KWTransientVoltageSuppressor

DESCRIPTION: The30KPseriesofhighcurrentuni/bi-directionaltransientsuppressorsaredesignedforA.C.lineprotectionandhighpowerDCbusclampingapplications.Thesedevicesofferuni/bi-directionalportprotectionfrom28voltsto288volts.Theyprovideaclampingvoltagelowerthanth

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

30kWTRANSIENTVOLTAGESUPPRESSOR

30kWTRANSIENTVOLTAGESUPPRESSOR •Availableinbothunidirectionalandbidirectionalconstruction(bidirectional“C”or“CA”suffix) •AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). •Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suf

DIGITRON

Digitron Semiconductors

DIGITRON

30000WattsTransientVoltageSuppressor28to288Volt

Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •30000WattsPeakPulsePowerCapabilityon10/1000uswaveform •Glasspassivatedjunction •PlasticpackageDevicesandLowincrementalsurgeresistance •Hightemperaturesolde

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

TRANSIENTVOLTAGESUPPRESSOR

VR:26-400Volts PPK:30,000Watts FEATURES: *Glasspassivatedjunctionchip *ExcellentClampingCapability *FastResponseTime *LowLeakageCurrent *Pb/RoHSFree

EIC

EIC discrete Semiconductors

EIC

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Glasspassivatedjunction •30000WPeakPulsePowercapabilityon10/1000µswaveform •Excellentclampingcapability •Repetitionrate(dutycycle):0.05 •Lowincrementalsurgeresistance •Fastresp

MDE

MDE Semiconductor, Inc.

MDE

GlassPassivatedJunctionTransientVoltageSuppressor

FEATURES PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 Glasspassivatedjunction 30000WPeakPulsePower capabilityon10/1000μswaveform Excellentclampingcapability Repetitionrate(dutycycle):0.05 Lowincrementalsurgeresistance Fastresponsetime:t

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

30000WSurfaceMountTransientVoltageSuppressors

Features Glasspassivatedchip 30000WPeakpowercapabilityat10×1000μswaveformRepetition rate(dutycycle):0.01 TypicalIRlessthan2μAabove64V Lowleakage UniandBidirectionalunit Excellentclampingcapability Veryfastresponsetime RoHScompliant

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

30000WTRANSIENTVOLTAGESUPPRESSOR

GlassPassivatedDieConstruction 30000WPeakPulsePowerDissipation 28V–288VStandoffVoltage Uni-andBi-DirectionalVersionsAvailable ExcellentClampingVoltage TypicalResponseTime

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

WTE

30000WTRANSIENTVOLTAGESUPPRESSOR

GlassPassivatedDieConstruction 30000WPeakPulsePowerDissipation 28V–288VStandoffVoltage Uni-andBi-DirectionalVersionsAvailable ExcellentClampingVoltage TypicalResponseTime

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

WTE

30000WSurfaceMountTransientVoltageSuppressors

Features Glasspassivatedchip 30000WPeakpowercapabilityat10×1000μswaveformRepetition rate(dutycycle):0.01 TypicalIRlessthan2μAabove64V Lowleakage UniandBidirectionalunit Excellentclampingcapability Veryfastresponsetime RoHScompliant

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Glasspassivatedjunction •30000WPeakPulsePowercapabilityon10/1000µswaveform •Excellentclampingcapability •Repetitionrate(dutycycle):0.05 •Lowincrementalsurgeresistance •Fastresp

MDE

MDE Semiconductor, Inc.

MDE

30000WattsTransientVoltageSuppressor28to288Volt

Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •30000WattsPeakPulsePowerCapabilityon10/1000uswaveform •Glasspassivatedjunction •PlasticpackageDevicesandLowincrementalsurgeresistance •Hightemperaturesolde

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

AxialLeadTransientVoltageSuppressors(TVS)

Description The30KPseriesisdesignedspecificallytoprotectsensitiveelectronicequipmentfromvoltagetransientsinducedbylightningandothertransientvoltageevents. Features ◆GlasspassivatedchipjunctioninP600Package ◆Lowleakage ◆UniandBidirectionalunit ◆Excellentcla

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

30KWTransientVoltageSuppressor

DESCRIPTION: The30KPseriesofhighcurrentuni/bi-directionaltransientsuppressorsaredesignedforA.C.lineprotectionandhighpowerDCbusclampingapplications.Thesedevicesofferuni/bi-directionalportprotectionfrom28voltsto288volts.Theyprovideaclampingvoltagelowerthanth

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

GlassPassivatedJunctionTransientVoltageSuppressor

FEATURES PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 Glasspassivatedjunction 30000WPeakPulsePower capabilityon10/1000μswaveform Excellentclampingcapability Repetitionrate(dutycycle):0.05 Lowincrementalsurgeresistance Fastresponsetime:t

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

30kWTRANSIENTVOLTAGESUPPRESSOR

文件:210.73 Kbytes Page:5 Pages

DIGITRON

Digitron Semiconductors

DIGITRON

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

文件:83.82 Kbytes Page:3 Pages

MDE

MDE Semiconductor, Inc.

MDE

TransientVoltageSuppressor

文件:322.44 Kbytes Page:3 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

文件:83.82 Kbytes Page:3 Pages

MDE

MDE Semiconductor, Inc.

MDE

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

文件:83.82 Kbytes Page:3 Pages

MDE

MDE Semiconductor, Inc.

MDE

30kWTRANSIENTVOLTAGESUPPRESSOR

文件:210.73 Kbytes Page:5 Pages

DIGITRON

Digitron Semiconductors

DIGITRON

30000WattsTransientVoltageSuppressor28to288Volt

文件:319.3 Kbytes Page:4 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

AxialLeadTransientVoltageSuppressors

文件:621.4 Kbytes Page:5 Pages

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

封装/外壳:R-6,轴向 包装:散装 描述:TVS DIODE 30VWM 55.2VC R6 电路保护 TVS - 二极管

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

文件:83.82 Kbytes Page:3 Pages

MDE

MDE Semiconductor, Inc.

MDE

封装/外壳:R-6,轴向 包装:散装 描述:TVS DIODE 30VWM 55.2VC R6 电路保护 TVS - 二极管

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

30KP30产品属性

  • 类型

    描述

  • 型号

    30KP30

  • 制造商

    EIC

  • 制造商全称

    EIC discrete Semiconductors

  • 功能描述

    TRANSIENT VOLTAGE SUPPRESSOR

更新时间:2025-5-19 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Microsemi
23+
DIP
12000
全新原装假一赔十
MICROSEMI
0332+
29
一级代理,专注军工、汽车、医疗、工业、新能源、电力
BORN(伯恩半导体)
24+
P600
50000
品牌代理,价格优势,技术支持!!
捷捷微
23+
R6
68000
捷捷微全系列供应,支持终端生产
JX
23+
P-600
7600
专注配单,只做原装进口现货
VISHAY/威世
23+
R-6
350800
原厂授权代理,海外优势订货渠道。可提供大量库存,详
MIC
24+
P-600
32900
VISHAY/威世
24+
R-6
50000
只做原装,欢迎询价,量大价优
捷捷微
23+
R6
50000
专业配单,原装正品假一罚十,代理渠道价格优
JX
23+
P-600
7600
专注配单,只做原装进口现货

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