丝印代码：3083MZ；General Purpose High Current NPN Transistor Array

文件：297.03 Kbytes Page：4 Pages

丝印代码：3083MZ；General Purpose High Current NPN Transistor Array

文件：297.03 Kbytes Page：4 Pages

General Purpose High Current NPN Transistor Array

General Purpose High Current NPN Transistor ArrayThe CA3083 is a versatile array of five high current (to 100mA) NPN transistors on a common monolithic substrate. In addition, two of these transistors (Q1 and Q2) are matched at low current (i.e., 1mA) for applications in which offset parameters are • High IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA (Max)\n• Matched Pair (Q1 and Q2)\n• 5 Independent Transistors Plus Separate Substrate Connection\n• Signal Processing and Switching Systems Operating from DC to VHF\n• Differential Amplifier\n• Thyristor Firing\n• See Applica;

6-Pin DIP Zero-Cross Optoisolators Triac Driver Output

6-Pin DIP Zero-Cross Optoisolators Triac Driver Output (800 Volts Peak) The MOC3081, MOC3082 and MOC3083 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon detectors performing the function of Zero Voltage Crossing bilateral triac drivers. They a

6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)

Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in the interface o

6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)

Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in the interface o

6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)

Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in the interface o

Optoisolator NPN Darlington Transistor Output

Description: The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo–darlington in a 6–Lead DIP type package. Features: • High Sensitivity: 1mA on the Input will Sink a TTL gate • High Isolation: 3550VDC, 1012Ω, 0.5pF