GLASS PASSIVATED BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FEATURES ● Surge overload rating -60 amperes peak ● Ldeal for printed circuit board ● Reliable low cost construction utilizing molded plastic technique results in expensive product ● Mounting Position :Any ● Lead:sliver plated

GLASS PASSIVATED BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FEATURES ● Surge overload rating -60 amperes peak ● Ldeal for printed circuit board ● Reliable low cost construction utilizing molded plastic technique results in expensive product ● Mounting Position :Any ● Lead:sliver plated

Bridge Rectifier Diode

Features • Glass passivated • Surge overload rating -60 amperes peak • Ideal for printed circuit board • Reliable low cost construction utilizing moulded plastic technique results in expensive product • Mounting position: Any • Lead: Sliver plated copper lead Description Bridge Rectifier

Glass Passivated Bridge Rectifiers

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2.0A BRIDGE RECTIFIER

Features ● Diffused Junction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability ● Ideal for Printed Circuit Boards

SINTERED GLASS PASSIVATED BRIDGE RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes FEATURES * Glass Passivated Die Construction * Diffused Junction * Low Foward Voltage Drop, High Current Capability * Surge Overload Rating to 60A Peak * Ideal for Printed Circuit Boards * Case to Terminal Isolation Voltage 25

SINGLE PHASE 2.0 AMPS. SILICON BRIDGE RECTIFIERS????

Features UL Recognized File # E-96005 Surge overload ratings to 50 amperes peak Ideal for printed circuit board Reliable low cost construction technique results in inexpensive product High temperature soldering guaranteed: 260℃ / 10 seconds / 0.375” ( 9.5mm ) lead length at 5 lbs.,

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 4.5 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors ● Infrared light emission close to monochromatic light : λP = 950 nm (typ.) ● Narrow directivity :

Darlington Phototransistor

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