Low voltage fast-switching PNP power transistor

Description The device in a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The complementary NPN is the 2STR1160. Features ■ Very low col

低压快速切换PNP功率晶体管

The device in a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.\n\n The complementary NPN is the 2STR1160. • Very low collector-emitter saturation voltage \n• High current gain characteristic \n• Fast switching speed \n• Miniature SOT-23 plastic package for surface mounting circuits;

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个