Description

The device in a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

The complementary NPN is the 2STR1160.

Features

■ Very low collector-emitter saturation voltage

■ High current gain characteristic

■ Fast switching speed

■ Miniature SOT-23 plastic package for surface mounting circuits

Applications

■ LED

■ Battery charger

■ Motor and relay driver

■ Voltage regulation